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| High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE(sat) typ = 2.4 V C G G C TO-247 AD G C E IXDH 20N120 E IXDH 20N120 D1 E C (TAB) G = Gate, C = Collector , E = Emitter TAB = Collector Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 20 kW Continuous Transient TC = 25C TC = 90C TC = 90C, tp = 1 ms VGE = 15 V, TJ = 125C, RG = 82 W Clamped inductive load, L = 30 H VGE = 15 V, VCE = VCES, TJ = 125C RG = 82 W, non repetitive TC = 25C IGBT Diode Maximum Ratings 1200 1200 20 30 38 25 50 ICM = 35 VCEK < VCES 10 200 75 -55 ... +150 -55 ... +150 300 0.8 - 1.2 6 V V V V A A A A Features q q q q q q q q q NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard package Advantages s W W Typical Applications C q q q Space savings High power density C C Nm g q q q q Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 4.5 2 6.5 V V V(BR)CES VGE(th) ICES IGES VCE(sat) VGE = 0 V IC = 0.6 mA, VCE = VGE VCE = VCES TJ = 25C TJ = 125C 1 mA mA 500 nA VCE = 0 V, VGE = 20 V IC = 20 A, VGE = 15 V 2.4 3 V 031 (c) 2000 IXYS All rights reserved 1-4 IXDH 20N120 IXDH 20N120 D1 Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 20 A, VGE = 15 V, VCE = 0.5 VCES 150 70 70 100 Inductive load, TJ = 125C IC = 20 A, VGE = 15 V, VCE = 600 V, RG = 82 W 75 500 70 3.1 2.4 pF pF pF nC ns ns ns ns mJ mJ 0.63 K/W Package with heatsink compound 0.25 K/W Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 AEP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-247 AD Outline Cies Coes Cres Qg td(on) tr td(off) tf Eon Eoff RthJC RthCH Reverse Diode (FRED) [D1 version only] Symbol VF IF IRM trr trr RthJC Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.6 2.1 2.8 V V A A A ns ns 1.6 K/W IF = 20 A, VGE = 0 V IF = 20 A, VGE = 0 V, TJ = 125C TC = 25C TC = 90C IF = 20 A, -diF/dt = 400 A/s, VR = 600 V VGE = 0 V, TJ = 125C IF = 1 A, -diF/dt = 100 A/s, VR = 30 V, VGE = 0 V 33 20 15 200 40 (c) 2000 IXYS All rights reserved 2-4 IXDH 20N120 IXDH 20N120 D1 40 35 A IC TJ = 25C VGE=17V 15V 13V 11V 40 A 35 IC 30 25 20 15 TJ = 125C VGE=17V 15V 13V 11V 30 25 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VCE 9V 9V 10 5 3.0 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VCE 3.5 V Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 40 35 A IC VCE = 20V TJ = 25C 45 A 40 35 IF 30 25 30 25 20 15 10 5 0 5 6 7 8 9 10 VGE 20 15 10 5 TJ = 125C TJ = 25C 11 V 0 0.0 0.5 1.0 1.5 2.0 VF 2.5 3.0 V Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode (D1 version only) 20 A IRM 15 trr 20 V VCE = 600V IC = 20A 400 ns VGE 15 300 trr 10 10 TJ= 125C VR= 600V IF = 20A IXDH20N120D1 200 5 5 IRM 100 0 0 10 20 30 40 50 60 70 QG 0 80 nC 0 100 200 300 400 A/ms -di/dt 0 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode (D1 version only) (c) 2000 IXYS All rights reserved 3-4 IXDH 20N120 IXDH 20N120 D1 7 6 mJ Eon 140 ns 120 100 td(on) tr Eon 80 VCE = 600V VGE = 15V 60 RG = 82W TJ = 125C 40 5 mJ Eoff td(off) Eoff 500 ns 400 t 300 4 3 2 1 5 4 3 2 1 0 0 10 20 IC t VCE = 600V VGE = 15V 200 RG = 82W TJ = 125C 100 tf 0 40 20 A 0 40 0 0 10 20 IC 30 A 30 Fig. 7 Typ. turn on energy and switching times versus collector current 12 mJ Eon 240 td(on) tr Eon 160 ns t Eoff Fig. 8 Typ. turn off energy and switching times versus collector current 4 mJ VCE = 600V VGE = 15V IC = 20A TJ = 125C 8 VCE = 600V VGE = 15V IC = 20A TJ = 125C Eoff td(off) 1600 ns 1200 t 3 2 4 80 800 1 tf 400 0 0 50 100 150 200 250 RG 300 W 0 350 0 0 50 100 150 200 250 RG 300 W 350 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 40 A 35 ICM 10 K/W 1 ZthJC RG = 82W TJ = 125C VCEK < VCES Fig.10 Typ. turn off energy and switching times versus gate resistor 30 25 20 15 10 5 0 0 200 400 600 800 1000 1200 V VCE 0.1 0.01 0.001 diode IGBT single pulse IXDH20N120D1 0.0001 0.00001 0.0001 0.001 0.01 t 0.1 s 1 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance (c) 2000 IXYS All rights reserved 4-4 |
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